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| 02/03/2004 RELIABILITY REPORT FOR DS21Q59, Rev A2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com ph: 972-371-3726 fax: 972-371-6016 mbl: 214-435-6610 Conclusion: The following qualification successfully meets the quality and reliability standards required of all Dallas Semiconductor products and processes: DS21Q59, Rev A2 In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. The current status of the reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html. Device Description: A description of this device can be found in the product data sheet. You can find the product data sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm. Reliability Derating: The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated. AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55C) ts = Time at stress temperature (e.g. 125C) k = Boltzmann's Constant (8.617 x 10-5 eV/K) Tu = Temperature at Use (K) Ts = Temperature at Stress (K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g. 7.0 volts) Vu = Maximum Operating Voltage (e.g. 5.5 volts) B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.) The Constant, B, related to the failure mechanism is derived from either internal studies or industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are unknown. All deratings will be done from the stress voltage to the maximum operating voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the 60% or 90% confidence level (Cf). The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test sample size Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF. The calculated failure rate for this device/process is: FAILURE RATE: MTTF (YRS): 41831 FITS: 2.7 The parameters used to calculate this failure rate are as follows: Cf: 60% Ea: 0.7 B: 0 Tu: 25 C Vu: 5.5 Volts The reliability data follows. A the start of this data is the device information. The next section is the detailed reliability data for each stress. The reliability data section includes the latest data available. Device Information: Process: Passivation: Die Size: Number of Transistors: Interconnect: Gate Oxide Thickness: D6H-2P2M,HPVt,TCZ ALOCOS:GOI Laser/TEOS Ox - Pass/Nit - Gen.LaserPrb 409 x 407 800000 Aluminum / 1% Silicon / 0.5% Copper 150 A ELECTRICAL CHARACTERIZATION DESCRIPTION ESD SENSITIVITY ESD SENSITIVITY ESD SENSITIVITY ESD SENSITIVITY ESD SENSITIVITY LATCH-UP LATCH-UP DATE CODE CONDITION 0311 0311 0311 0311 0311 0311 0311 EOS/ESD S5.1 HBM 500 VOLTS EOS/ESD S5.1 HBM 1000 VOLTS EOS/ESD S5.1 HBM 2000 VOLTS EOS/ESD S5.1 HBM 4000 VOLTS EOS/ESD S5.1 HBM 8000 VOLTS JESD78, I-TEST 125C JESD78, Vsupply TEST 125C Total: READPOINT QUANTITY 1 1 1 1 1 PUL'S PUL'S PUL'S PUL'S PUL'S 3 3 3 3 3 6 6 FAILS 0 0 0 0 3 0 0 3 OPERATING LIFE DESCRIPTION HIGH VOLTAGE LIFE HIGH VOLTAGE LIFE HIGH VOLTAGE LIFE HIGH TEMP OP LIFE HIGH TEMP OP LIFE DATE CODE CONDITION 0227 0307 0310 0311 0312 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 6.0 VOLTS 125C, 3.5 VOLTS 125C, 3.3 VOLTS READPOINT QUANTITY 1000 HRS 1000 HRS 1000 HRS 1000 HRS 1000 HRS Total: 77 77 80 77 45 FAILS 0 0 0 0 0 0 STORAGE LIFE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY FAILS STORAGE LIFE STORAGE LIFE STORAGE LIFE STORAGE LIFE STORAGE LIFE STORAGE LIFE 0305 0309 0312 0312 0312 0330 125C 125C 125C 125C 150C 125C 1000 HRS 1000 HRS 1000 HRS 1000 HRS 1000 HRS 1000 HRS Total: 45 45 42 41 77 45 0 0 0 0 0 0 0 TEMPERATURE CYCLE DESCRIPTION TEMP CYCLE TEMP CYCLE TEMP CYCLE TEMP CYCLE TEMP CYCLE TEMP CYCLE TEMP CYCLE, SLOW DATE CODE CONDITION 0305 0309 0310 0312 0312 0312 0330 -55C TO 125C -55C TO 125C -55C TO 125C -55C TO 125C -55C TO 125C -55C TO 125C -40C TO +125C READPOINT QUANTITY 1000 CYS 1000 CYS 1000 CYS 1000 CYS 1000 CYS 1000 CYS 1000 CYS Total: 45 45 80 45 45 76 45 FAILS 0 0 0 0 0 0 0 0 UNBIASED MOISTURE RESISTANCE DESCRIPTION MOISTURE SOAK MOISTURE SOAK MOISTURE SOAK MOISTURE SOAK HAST MOISTURE SOAK DATE CODE CONDITION 0305 0309 0312 0312 0312 0330 85 C/85% R.H. 85 C/85% R.H. 85 C/85% R.H. 85 C/85% R.H. 130C, 85% R.H. 85 C/85% R.H. READPOINT QUANTITY 1000 HRS 1000 HRS 1000 HRS 1000 HRS 96 HRS 45 45 45 45 45 45 FAILS 0 0 0 0 0 0 0 1000 HRS Total: FAILURE RATE: MTTF (YRS): 41831 FITS: 2.7 |
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